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| Ordering number : ENA1097 2SC5539A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5539A Features * * * * * VHF to UHF Low-Noise Amplifier and OSC Applications Low noise : NF=1.1dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7.5GHz typ. Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg When mounted on glass epoxy substrate Conditions Ratings 20 12 2 100 150 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT Cob Cre VCB=10V, IE=0A VEB=1V, IC=0A VCE=5V, IC=30mA VCE=5V, IC=30mA VCB=5V, f=1MHz VCB=5V, f=1MHz 90 6 7.5 0.85 0.6 1.3 Conditions Ratings min typ max 1.0 10 200 GHz pF pF Unit A A Marking : ND Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network O2109AB TK IM TC-00002101 No. A1097-1/6 2SC5539A Continued from preceding page. Parameter Forward Transfer Gain Noise Figure Symbol S21e NF 2 Conditions VCE=5V, IC=30mA, f=1GHz VCE=5V, IC=7mA, f=1GHz Ratings min 10 typ 12 1.1 2.0 max Unit dB dB Package Dimensions unit : mm (typ) 7029-002 Top View 1.4 Marking 3 ND 1 2 1 : Base 2 : Emitter 3 : Collector Top View 0.3 0.25 3 1.4 0.8 1 0.3 2 0.2 0.45 0.1 1 2 0.07 0.6 3 Bottom View 0.07 1 : Base 2 : Emitter 3 : Collector SANYO : SSFP 50 IC -- VCE 0.35mA 0.30mA 100 IC -- VBE Collector Current, IC -- mA 0.25mA 30 Collector Current, IC -- mA 40 VCE=5V 0.6 0.8 80 0.20mA 60 0.15mA 20 40 0.10mA 10 0.05mA IB=0mA 0 2 4 6 8 10 IT01418 20 0 0 0 0.2 0.4 1.0 1.2 IT01419 Collector-to-Emitter Voltage, VCE -- V 7 5 Base-to-Emitter Voltage, VBE -- V 10 hFE -- IC fT -- IC =5 V CE V 2V Gain-Bandwidth Product, fT -- GHz 7 3 DC Current Gain, hFE 2 VCE=5V 2V 5 100 7 5 3 2 3 2 10 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 1.0 1.0 2 3 5 7 10 2 3 5 2V 7 100 IT01421 Collector Current, IC -- mA IT01420 Collector Current, IC -- mA No. A1097-2/6 2SC5539A 10 7 5 Cob -- VCB Reverse Transfer Capacitance, Cre -- pF f=1MHz 10 7 5 3 2 Cre -- VCB f=1MHz Output Capacitance, Cob -- pF 3 2 1.0 7 5 3 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Base Voltage, VCB -- V 10 7 100 IT01422 0.1 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 NF -- IC f=1GHz 16 Collector-to-Base Voltage, VCB -- V S21e2 -- I 7 100 IT01423 C f=1GHz Forward Transfer Gain,S21e2 -- dB 14 12 10 8 6 4 2 0 1.0 8 Noise Figure, NF -- dB =5V VCE 2V 6 4 2 VC =2 E V 5V 0 7 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 100 IT01424 7 2 3 5 7 10 2 3 5 180 PC -- Ta When mounted on glass epoxy substrate Collector Current, IC -- mA 7 100 IT01425 Collector Dissipation, PC -- mW 150 120 90 60 30 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT14854 No. A1097-3/6 2SC5539A S Parameters (Common emitter) VCE=2V, IC=5mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.828 0.741 0.666 0.640 0.626 0.619 0.613 0.608 0.604 0.601 0.599 S11 --48.7 --84.3 --124.2 --143.4 --155.0 --163.0 --169.1 --174.2 --178.8 177.0 173.1 S21 13.003 10.001 6.405 4.574 3.520 2.852 2.415 2.098 1.869 1.709 1.564 S21 149.5 129.4 106.5 94.1 85.6 79.0 73.1 67.9 63.3 59.0 55.0 S12 0.044 0.068 0.087 0.094 0.101 0.108 0.116 0.125 0.136 0.148 0.161 S12 64.6 49.7 38.5 37.8 39.7 42.9 46.6 50.0 53.5 56.2 58.5 S22 0.879 0.690 0.467 0.376 0.329 0.301 0.291 0.287 0.289 0.299 0.306 S22 --25.1 --40.4 --53.3 --57.5 --60.6 --64.1 --67.1 --70.5 --73.7 --76.4 --79.5 VCE=2V, IC=10mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.731 0.649 0.605 0.591 0.585 0.580 0.575 0.570 0.568 0.563 0.560 S11 --66.7 --105.7 --140.7 --155.7 --164.6 --170.7 --175.6 --179.9 176.3 172.6 169.2 S21 19.854 13.725 7.870 5.458 4.164 3.383 2.857 2.476 2.204 1.995 1.822 S21 140.5 119.7 100.6 90.7 83.7 78.2 73.1 68.7 64.6 60.6 57.0 S12 0.039 0.054 0.068 0.080 0.091 0.105 0.119 0.134 0.150 0.167 0.184 S12 59.3 46.8 44.5 48.0 51.7 55.6 58.2 60.0 61.3 62.1 62.4 S22 0.785 0.547 0.330 0.251 0.213 0.195 0.188 0.186 0.188 0.193 0.197 S22 --37.3 --55.9 --71.5 --77.2 --81.2 --84.8 --87.8 --90.7 --93.2 --95.0 --97.3 VCE=2V, IC=20mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.637 0.590 0.575 0.571 0.567 0.563 0.559 0.554 0.551 0.547 0.543 S11 --88.2 --126.0 --153.8 --164.9 --171.7 --176.7 179.3 175.7 172.4 169.1 166.0 S21 26.053 16.158 8.749 5.965 4.528 3.675 3.100 2.686 2.386 2.157 1.971 S21 131.0 111.8 96.1 88.0 82.2 77.3 72.8 68.8 65.1 61.4 58.0 S12 0.032 0.043 0.057 0.072 0.089 0.106 0.124 0.142 0.161 0.179 0.198 S12 55.5 47.8 52.2 57.5 61.1 63.3 64.9 65.5 65.4 65.3 65.0 S22 0.668 0.422 0.247 0.187 0.161 0.150 0.146 0.145 0.147 0.149 0.154 S22 --50.8 --71.8 --90.7 --100.6 --107.3 --112.0 --115.0 --117.6 --119.1 --119.9 --120.5 VCE=2V, IC=30mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.601 0.578 0.575 0.573 0.570 0.567 0.562 0.558 0.555 0.551 0.547 S11 --101.8 --136.4 --159.7 --169.2 --175.1 --179.4 177.0 173.6 170.6 167.5 164.4 S21 28.123 16.642 8.828 5.994 4.542 3.681 3.109 2.690 2.391 2.161 1.975 S21 125.8 108.1 94.0 86.6 81.1 76.5 72.2 68.3 64.6 61.1 57.7 S12 0.029 0.039 0.053 0.070 0.088 0.106 0.125 0.144 0.163 0.183 0.202 S12 53.5 49.5 56.1 61.5 64.7 66.6 67.5 67.7 67.3 66.8 65.9 S22 0.600 0.365 0.215 0.168 0.148 0.140 0.137 0.138 0.140 0.143 0.146 S22 --57.7 --79.2 --99.5 --110.4 --117.6 --122.3 --125.1 --127.3 --128.4 --128.8 --129.1 No. A1097-4/6 2SC5539A S Parameters (Common emitter) VCE=5V, IC=5mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.842 0.753 0.666 0.628 0.610 0.602 0.594 0.589 0.586 0.581 0.578 S11 --43.0 --76.7 --116.6 --137.8 --150.4 --158.9 --165.4 --171.0 --175.8 179.7 175.5 S21 13.211 10.474 6.960 5.029 3.885 3.146 2.663 2.308 2.054 1.876 1.713 S21 152.2 132.8 109.6 96.7 87.9 81.2 75.3 70.1 65.5 61.1 57.1 S12 0.035 0.056 0.073 0.081 0.086 0.092 0.100 0.109 0.118 0.129 0.141 S12 68.0 53.0 41.7 40.2 42.6 46.5 50.4 54.2 57.8 60.5 63.5 S22 0.905 0.746 0.542 0.452 0.409 0.381 0.371 0.367 0.369 0.378 0.383 S22 --19.6 --31.7 --40.9 --43.3 --44.9 --47.0 --49.2 --52.0 --54.8 --57.6 --60.7 VCE=5V, IC=10mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.745 0.648 0.583 0.565 0.555 0.548 0.542 0.538 0.535 0.532 0.529 S11 --58.2 --96.1 --133.3 --149.8 --159.9 --166.9 --172.1 --176.8 179.3 175.5 171.9 S21 20.417 14.809 8.762 6.104 4.666 3.797 3.203 2.771 2.460 2.220 2.025 S21 144.3 123.3 103.2 92.8 85.6 79.9 74.7 70.3 66.2 62.2 58.5 S12 0.031 0.046 0.059 0.069 0.079 0.091 0.104 0.117 0.132 0.147 0.162 S12 63.5 50.4 46.3 50.1 54.1 57.7 60.8 62.8 64.6 65.7 66.6 S22 0.829 0.612 0.398 0.318 0.281 0.263 0.255 0.252 0.254 0.256 0.262 S22 --28.7 --42.6 --51.2 --52.4 --53.1 --54.4 --56.1 --58.6 --60.8 --63.3 --65.9 VCE=5V, IC=30mA, ZO=50 Freq(MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.600 0.544 0.526 0.521 0.517 0.514 0.509 0.505 0.503 0.499 0.496 S11 --87.0 --124.7 --152.5 --163.7 --170.7 --175.5 --179.5 177.1 173.8 170.7 167.6 S21 30.637 18.945 10.236 6.972 5.289 4.281 3.605 3.115 2.764 2.492 2.270 S21 130.8 111.8 96.4 88.5 82.8 78.2 73.8 69.9 66.3 62.7 59.3 S12 0.024 0.033 0.047 0.061 0.077 0.093 0.109 0.126 0.143 0.160 0.178 S12 57.5 52.0 58.2 63.3 66.4 68.4 69.6 70.1 70.0 70.0 69.5 S22 0.670 0.427 0.255 0.198 0.174 0.163 0.160 0.160 0.163 0.167 0.173 S22 --42.9 --56.2 --61.9 --62.0 --62.5 --63.3 --65.1 --67.5 --69.4 --71.5 --73.5 No. A1097-5/6 2SC5539A SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2009. Specifications and information herein are subject to change without notice. PS No. A1097-6/6 |
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